absolute maximum ratings parameter units i d @ v gs = -12v, t c =25c continuous drain current -2.3 i d @ v gs = -12v, t c =100c continuous drain current -1.5 i dm pulsed drain current -9.2 p d @ t c = 25c max. power dissipation 15 w linear derating factor 0.1 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 75 mj i ar avalanche current -2.3 a e ar repetitive avalanche energy 1.5 mj dv/dt peak diode recovery dv/dt -12.5 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 0.42 (typical) g pre-irradiation international rectifiers rad-hard tm hexfet ? technology provides high performance power mosfetsfor space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. c a www.irf.com 1 features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package surface mount light weight for footnotes refer to the last page lcc - 18 radiation hardened IRHE9110 power mosfet 100v - p channelsurface mount (lcc-18) product summary part number radiation level r ds(on) i d IRHE9110 100k rads (si) 1.1 ? -2.3a irhe93110 300k rads (si) 1.1 ? -2.3a rad-hard tm hexfet ? technology pd-97180 downloaded from: http:///
IRHE9110 pre-irradiation 2 www.irf.com for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 8.3 r thjpcb junction-to-pc board 19 solder to a copper clad pc board rthja junction-to-air 75 typical socket c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) -2.3 i sm pulse source current (body diode) -9.2 v sd diode forward voltage 2.6 v t j = 25c, i s = -2.3a, v gs = 0v t rr reverse recovery time 138 ns t j = 25c, i f = -2.3a, di/dt -100a/ s q rr reverse recovery charge 520 nc v dd -25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -100 v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown -0.094 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 1.1 ? v gs = -12v, i d = -1.5a resistance v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 0.7 s ( ) v ds = -15v, i ds = -1.5a i dss zero gate voltage drain current -25 v ds = -80v ,v gs =0v -250 v ds = -80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 16 v gs = -12v, i d = -2.3a q gs gate-to-source charge 4.3 nc v ds = -50v q gd gate-to-drain (miller) charge 3.3 t d (on) turn-on delay time 21 v dd = -50v, i d = -2.3a, t r rise time 17 v gs = -12v, r g = 7.5 ? t d (off) turn-off delay time 32 t f fall time 32 l s + l d total inductance 6.1 c iss input capacitance 290 v gs = 0v, v ds = -25v c oss output capacitance 94 pf f = 1.0mhz c rss reverse transfer capacitance 13 na ? nh ns a measured from the center of drain pad to center of source pad r g internal gate resistance 20.5 ? f = 1.0mhz, open drain downloaded from: http:///
www.irf.com 3 pre-irradiation IRHE9110 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltag e -100 -100 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage - 2.0 - 4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs = -20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -25 -25 a v ds = -80v, v gs = 0v r ds(on) static drain-to-source 1.06 1.06 ? v gs = -12v, i d = -1.5a on-state resistance (to-3) v sd diode forward voltage -2.6 -2.6 v v gs = 0v, i s = -2.3a international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part number IRHE91102. part number irhe93110 fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds cu br i table 2. single event effect safe operating area ion let energy range v ds(v) mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =5v @ v gs =10v @ v gs =15v @ v gs =20v cu 28 285 43 -100 -100 -100 -70 -60 br 36.8 305 39 -100 -100 -70 -50 -40 i 59.8 343 32.6 -60 downloaded from: http:///
IRHE9110 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 56789101112131415 -v gs , gate-to-source voltage (v) 1.0 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = -50v 60 s pulse width t j = 150c t j = 25c 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = -12v i d = -2.3a downloaded from: http:///
www.irf.com 5 pre-irradiation IRHE9110 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 -v ds , drain-to-source voltage (v) 0 100 200 300 400 500 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 00.511.522.533.54 -v sd , source-to-drain voltage (v) 0.01 0.1 1 10 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s 024681 01 21 4 q g, total gate charge (nc) 0 4 8 12 16 20 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -80v v ds = -50v v ds = -20v i d = -2.3a for test circuit see figure 13 downloaded from: http:///
IRHE9110 pre-irradiation 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms
1 0.1 %
+ - v ds 90% 10% v gs t d(on) t r t d(off) t f v 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 t c , case temperature (c) 0 0.5 1 1.5 2 2.5 - i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
www.irf.com 7 pre-irradiation IRHE9110 fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -1.0a -1.5a bottom -2.3a downloaded from: http:///
IRHE9110 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -80volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = -25v, starting t j = 25c, l= 28mh peak i l = -2.3a, v gs = -12v i sd -2.3a, di/dt -540a/ s, v dd -100v, t j 150c case outline and dimensions lcc-18 footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/2007 downloaded from: http:///
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